Magnetic domains in III-V magnetic semiconductors

T. Dietl; Jürgen König; A. H. MacDonald

doi:10.1103/PhysRevB.64.241201

Magnetic domains in III-V magnetic semiconductors

Materials Science 2009-11-07 v2 Strongly Correlated Electrons

Authors: T. Dietl , Jürgen König , A. H. MacDonald

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

Recent progress in theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width d = 1.1 um for Ga_0.957Mn_0.043As/In_0.16Ga_0.84As compares favorably to the experimental value 1.5 um, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363 (2000)].

Keywords

magnetic anisotropy magnetic domains III-V magnetic semiconductors domain walls stripe domains

Cite

@article{arxiv.cond-mat/0107009,
  title  = {Magnetic domains in III-V magnetic semiconductors},
  author = {T. Dietl and Jürgen König and A. H. MacDonald},
  journal= {arXiv preprint arXiv:cond-mat/0107009},
  year   = {2009}
}

Comments

4 RevTex pages, 2 figures spelling of author's names corrected in abstract page

Related papers

View all related →