We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects, and M-center, a metastable defect also recently assigned to carbon interstitial defects. We propose that EH1 and EH3 are identical to M1 and M3 and assign them to C_i^(= ) (h) and C_i^(0 ) (h), respectively. Moreover, we provide direct evidence that Laplace-DLTS can be used as an excellent tool to distinguish otherwise identical DLTS signals associated with S1 (VSi) and EH1 (Ci).
@article{arxiv.2204.06921,
title = {M-center in low-energy electron irradiated 4H-SiC},
author = {Tihomir Knezevic and Amira Hadzipasic and Takeshi Ohshima and Takahiro Makino and Ivana Capan},
journal= {arXiv preprint arXiv:2204.06921},
year = {2022}
}