English

Low temperature investigations of single silicon vacancy colour centres in diamond

Quantum Physics 2013-04-08 v3 Materials Science

Abstract

We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature dependent homogeneous broadening and blue shifts by about 20 cm-1 upon cooling from room temperature to 5 K. We employ excitation power dependent g(2) measurements to explore the temperature dependent internal population dynamics of single SiV centres and infer almost temperature independent dynamics.

Keywords

Cite

@article{arxiv.1210.3201,
  title  = {Low temperature investigations of single silicon vacancy colour centres in diamond},
  author = {Elke Neu and Christian Hepp and Michael Hauschild and Stefan Gsell and Martin Fischer and Hadwig Sternschulte and Doris Steinmueller-Nethl and Matthias Schreck and Christoph Becher},
  journal= {arXiv preprint arXiv:1210.3201},
  year   = {2013}
}

Comments

19 pages, 9 figures, latest version accepted for publication in New Journal of Physics