Local effects of multiple electrostatic gates placed beneath carbon nanotubes grown by chemical vapor deposition (CVD) are reported. Single-walled carbon nanotubes were grown by CVD from Fe catalyst islands across thin Mo "finger gates" (150 x 10nm). Prior to tube growth, several finger gates were patterned lithogrpahically and subsequently coated with a patterned high-k dielectric using low-temperature atomic layer deposition. Transport measurements demonstrate that local finger gates have a distinct effect from a global backgate.
@article{arxiv.cond-mat/0308477,
title = {Local gating of carbon nanotubes},
author = {M. J. Biercuk and N. Mason and C. M. Marcus},
journal= {arXiv preprint arXiv:cond-mat/0308477},
year = {2015}
}