Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy
Abstract
We study the relationship between the local density of states (LDOS) and the conductance variation in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and . We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS- correspondence by means of exact numerical simulations, when localized states or semi-classical orbits characterize the wavefunction of the system.
Keywords
Cite
@article{arxiv.0711.3370,
title = {Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy},
author = {M. G. Pala and B. Hackens and F. Martins and H. Sellier and V. Bayot and S. Huant and T. Ouisse},
journal= {arXiv preprint arXiv:0711.3370},
year = {2008}
}
Comments
8 pages, 8 figures