English

Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy

Mesoscale and Nanoscale Physics 2008-03-13 v1

Abstract

We study the relationship between the local density of states (LDOS) and the conductance variation ΔG\Delta G in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift ΔG\Delta G is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and ΔG\Delta G. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS-ΔG\Delta G correspondence by means of exact numerical simulations, when localized states or semi-classical orbits characterize the wavefunction of the system.

Keywords

Cite

@article{arxiv.0711.3370,
  title  = {Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy},
  author = {M. G. Pala and B. Hackens and F. Martins and H. Sellier and V. Bayot and S. Huant and T. Ouisse},
  journal= {arXiv preprint arXiv:0711.3370},
  year   = {2008}
}

Comments

8 pages, 8 figures

R2 v1 2026-06-21T09:45:48.045Z