Lithography-Free Fabrication of Graphene Devices

N. Staley; H. Wang; C. Puls; J. Forster; T. N. Jackson; K. McCarthy; B. Clouser; Y. Liu

doi:10.1063/1.2719607

Lithography-Free Fabrication of Graphene Devices

Mesoscale and Nanoscale Physics 2015-06-25 v1 Superconductivity

Authors: N. Staley , H. Wang , C. Puls , J. Forster , T. N. Jackson , K. McCarthy , B. Clouser , Y. Liu

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Abstract

We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to prepare devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1, 2, 3 and higher. We observed localization behavior and an apparent reduction of density of states (DOS) near the Fermi energy in nLG.

Keywords

graphene devices lithography-free fabrication ultrathin quartz filament electrical transport density of states

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@article{arxiv.cond-mat/0612128,
  title  = {Lithography-Free Fabrication of Graphene Devices},
  author = {N. Staley and H. Wang and C. Puls and J. Forster and T. N. Jackson and K. McCarthy and B. Clouser and Y. Liu},
  journal= {arXiv preprint arXiv:cond-mat/0612128},
  year   = {2015}
}

Lithography-Free Fabrication of Graphene Devices

Abstract

Keywords

Cite

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