Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Abstract
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies.
Cite
@article{arxiv.2506.06627,
title = {Lithography defined semiconductor moires with anomalous in-gap quantum Hall states},
author = {Wei Pan and D. Bruce Burckel and Catalin D. Spataru and Keshab R. Sapkota and Aaron J. Muhowski and Samuel D. Hawkins and John F. Klem and Layla S. Smith and Doyle A. Temple and Zachery A. Enderson and Zhigang Jiang and Komalavalli Thirunavukkuarasu and Li Xiang and Mykhaylo Ozerov and Dmitry Smirnov and Chang Niu and Peide D. Ye and Praveen Pai and Fan Zhang},
journal= {arXiv preprint arXiv:2506.06627},
year = {2025}
}
Comments
published by Nano Letters