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Lithiation of silicon via lithium Zintl-defect complexes

Materials Science 2013-05-28 v1

Abstract

An extensive search for low-energy lithium defects in crystalline silicon using density-functional-theory methods and the ab initio random structure searching (AIRSS) method shows that the four-lithium-atom substitutional point defect is exceptionally stable. This defect consists of four lithium atoms with strong ionic bonds to the four under-coordinated atoms of a silicon vacancy defect, similar to the bonding of metal ions in Zintl phases. This complex is stable over a range of silicon environments, indicating that it may aid amorphization of crystalline silicon and form upon delithiation of the silicon anode of a Li-ion rechargeable battery.

Keywords

Cite

@article{arxiv.1305.6265,
  title  = {Lithiation of silicon via lithium Zintl-defect complexes},
  author = {Andrew J. Morris and R. J. Needs and Elodie Salager and C. P. Grey and Chris J. Pickard},
  journal= {arXiv preprint arXiv:1305.6265},
  year   = {2013}
}

Comments

4 pages, 3 figures