We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.
@article{arxiv.1512.00667,
title = {Linear magnetoresistance in compensated graphene bilayer},
author = {G. Yu. Vasileva and D. Smirnov and Yu. L. Ivanov and Yu. B. Vasilyev and P. S. Alekseev and A. P. Dmitriev and I. V. Gornyi and V. Yu. Kachorovskii and M. Titov and B. N. Narozhny and R. J. Haug},
journal= {arXiv preprint arXiv:1512.00667},
year = {2016}
}