Light-Matter Interaction and Lasing in Semiconductor Nanowires: A combined FDTD and Semiconductor Bloch Equation Approach
Optics
2015-01-21 v3 Mesoscale and Nanoscale Physics
Abstract
We present a time-domain model for the simulation of light-matter interaction in semiconductors in arbitrary geometries and across a wide range of excitation conditions. The electromagnetic field is treated classically using the finite-difference time-domain method. The polarization and occupation numbers of the semiconductor material are described using the semiconductor Bloch equations including many-body effects in the screened Hartree-Fock approximation. Spontaneous emission noise is introduced using stochastic driving terms. As an application of the model, we present simulations of the dynamics of a nanowire laser including optical pumping, seeding by spontaneous emission and the selection of lasing modes.
Keywords
Cite
@article{arxiv.1410.4670,
title = {Light-Matter Interaction and Lasing in Semiconductor Nanowires: A combined FDTD and Semiconductor Bloch Equation Approach},
author = {Robert Buschlinger and Michael Lorke and Ulf Peschel},
journal= {arXiv preprint arXiv:1410.4670},
year = {2015}
}
Comments
7 pages, 6 figures