Leaky interface phonons in AlGaAs/GaAs structures
Abstract
A dispersion equation for the interface waves has been derived for the interface of two cubic crystals in the plane perpendicular to [001]. A reasonable hypothesis has been made about the total number of the acoustic modes. Due to this hypothesis the number is 64, but not all of the modes have physical meaning of the interface waves. The rules have been worked out to select physical branches among all 64 roots of dispersion equation. The physical meaning of leaky interface waves is discussed. The calculations have been made for the interface AlGaAs/GaAs. In this case all physical interface modes have been shown to be leaky. The velocities of the interface waves are calculated as a function of an angle in the plane of interface. The results support a recent interpretation of a new type oscillations of magnetoresistance as a resonant scattering of two-dimensional electron gas by the leaky interface phonons.
Cite
@article{arxiv.cond-mat/0010040,
title = {Leaky interface phonons in AlGaAs/GaAs structures},
author = {I. V. Ponomarev and A. L. Efros},
journal= {arXiv preprint arXiv:cond-mat/0010040},
year = {2009}
}
Comments
Revtex, 16 pages, 4 figures; the section "Numerical Results" extended, Fig. 3 and Fig. 4 subsitituted the previous Fig. 3, table II added, new refferences added, some refferences removed