We have studied the magnetotransport properties of a Sb2Se2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100\% at B=31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B=15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α=32 T, β=80 T and γ=117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be mβ∗=0.16mo and mγ∗=0.63mo for the β and γ bands respectively. Large MR of Sb2Se2Te is suitable for utilization in electronic instruments such as a computer hard disc, high field magnetic sensors, and memory devices.
@article{arxiv.1704.02682,
title = {Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal},
author = {K. Shrestha and V. Marinova and D. Graf and B. Lorenz and C. W. Chu},
journal= {arXiv preprint arXiv:1704.02682},
year = {2017}
}