We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs using a weakly dissipative lead reveals non-Fermi liquid temperature (T) dependence due to environmental Coulomb blockade (ECB), an interaction effect from the lead acting on the nanowire junction. By increasing T, these large ZBPs either show a height increase or a transition from split peaks to a ZBP, both deviate significantly from non-dissipative devices where a Fermi-liquid T dependence is revealed. Our result demonstrates the competing effect between ECB and thermal broadening on Andreev bound states.
Cite
@article{arxiv.2202.09299,
title = {Large Andreev bound state zero bias peaks in a weakly dissipative environment},
author = {Zhichuan Wang and Shan Zhang and Dong Pan and Gu Zhang and Zezhou Xia and Zonglin Li and Donghao Liu and Zhan Cao and Lei Liu and Lianjun Wen and Dunyuan Liao and Ran Zhuo and Yongqing Li and Dong E. Liu and Runan Shang and Jianhua Zhao and Hao Zhang},
journal= {arXiv preprint arXiv:2202.09299},
year = {2022}
}
Comments
Raw data and processing codes are available at https://doi.org/10.5281/zenodo.6123849