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Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances

Strongly Correlated Electrons 2019-05-15 v2

Abstract

We report the discovery of a novel giant magnetoresistance (GMR) phenomenon in a family of BaMn2_{2}Pn2_{2} antiferromagnets (Pn stands for P, As, Sb, and Bi) with a parity-time symmetry. The resistivities of these materials are reduced by 6060 times in magnetic fields (H\vec{H}'s), thus yielding the GMR of about 98%-98\%. The GMR changes systematically along with the Pn elements, hinting that its origin is the spin orbit coupling (SOC) and/or dd-pp orbital hybridization. A positive MR component emerging on top of the negative GMR at low temperatures suggests an orbital-sensitive magnetotransport as H\vec{H} suppresses the conduction of the electron-like carriers in the dd-like band but enhances those of hole-like ones in the dd-pp hybridized band. The anisotropy of the GMR reveals that the electrical conductivity is extremely sensitive to the minute changes in the direction of the antiferromagnetic moments induced by the parity-time breaking H\vec{H}, which seems to be associated with a magnetoelectric effect in the dynamic regime of conduction electrons. We attribute the observed GMR to the non-trivial low energy band of BMPn's, which is governed by the parity-time symmetry and an magnetic hexadecapole ordering.

Keywords

Cite

@article{arxiv.1811.06140,
  title  = {Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances},
  author = {Kim-Khuong Huynh and Takuma Ogasawara and Keita Kitahara and Yoichi Tanabe and Stephane Yu Matsushita and Time Tahara and Takanori Kida and Masayuki Hagiwara and Denis Arčon and Katsumi Tanigaki},
  journal= {arXiv preprint arXiv:1811.06140},
  year   = {2019}
}

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