We report the discovery of a novel giant magnetoresistance (GMR) phenomenon in a family of BaMn2Pn2 antiferromagnets (Pn stands for P, As, Sb, and Bi) with a parity-time symmetry. The resistivities of these materials are reduced by 60 times in magnetic fields (H's), thus yielding the GMR of about −98%. The GMR changes systematically along with the Pn elements, hinting that its origin is the spin orbit coupling (SOC) and/or d-p orbital hybridization. A positive MR component emerging on top of the negative GMR at low temperatures suggests an orbital-sensitive magnetotransport as H suppresses the conduction of the electron-like carriers in the d-like band but enhances those of hole-like ones in the d-p hybridized band. The anisotropy of the GMR reveals that the electrical conductivity is extremely sensitive to the minute changes in the direction of the antiferromagnetic moments induced by the parity-time breaking H, which seems to be associated with a magnetoelectric effect in the dynamic regime of conduction electrons. We attribute the observed GMR to the non-trivial low energy band of BMPn's, which is governed by the parity-time symmetry and an magnetic hexadecapole ordering.
@article{arxiv.1811.06140,
title = {Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances},
author = {Kim-Khuong Huynh and Takuma Ogasawara and Keita Kitahara and Yoichi Tanabe and Stephane Yu Matsushita and Time Tahara and Takanori Kida and Masayuki Hagiwara and Denis Arčon and Katsumi Tanigaki},
journal= {arXiv preprint arXiv:1811.06140},
year = {2019}
}