Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides
Applied Physics
2020-05-04 v1 Optics
Abstract
An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth.
Keywords
Cite
@article{arxiv.2005.00335,
title = {Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides},
author = {Jens H. Schmid and Mohamed Rahim and Grzegorz Pakulski and Martin Vachon and Siegfried Janz and Pavel Cheben and Dan-Xia Xu and Philip J. Poole and Pedro Barrios and Weihong Jiang and Jean Lapointe and Daniele Melati},
journal= {arXiv preprint arXiv:2005.00335},
year = {2020}
}