The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The single donor emission is intensity and frequency stable with a transition linewidth less than twice the lifetime limit. The isolation of optically stable single donors post-FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.
@article{arxiv.2310.05806,
title = {Isolation of Single Donors in ZnO},
author = {Ethan R. Hansen and Vasileios Niaouris and Bethany E. Matthews and Christian Zimmermann and Xingyi Wang and Roman Kolodka and Lasse Vines and Steven R. Spurgeon and Kai-Mei C. Fu},
journal= {arXiv preprint arXiv:2310.05806},
year = {2024}
}
Comments
E. R. Hansen and V. Niaouris contributed equally to this work. 15 pages, 13 figures