Spintronic Terahertz emitters, based on optically triggered spin-to-charge interconversion processes, have recently emerged as novel route towards compact and efficient THz sources. Yet, the next challenge for further technologically-relevant devices remains to modulate the emission, with low-energy consumption operation. To this aim, ferroelectric materials coupled to active spin-orbit layers such as two-dimensional transition metal dichalcogenides are suitable candidates. In this work, we present the realization of a large area heterostructure of CoFeB/PtSe2/MoSe2 on a bi-domain LiNbO3 substrate. Using THz time-domain spectroscopy, we show that the ferroelectric polarization direction induces a sizeable modulation of the THz emission. We rationalise these experimental results by using band structure and spin accumulation calculations that are consistent with an interfacial spin-to-charge conversion mediated by inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface and being tuned by ferroelectricity in the adjacent LiNbO3 surface. This work points out the relevance of field effect spin-orbit architectures for novel THz technologies.
@article{arxiv.2412.20108,
title = {Inverse Rashba-Edelstein THz emission modulation induced by ferroelectricity in CoFeB/PtSe2/MoSe2//LiNbO3 systems},
author = {S. Massabeau and O. Paull and A. Pezo and F. Miljevic and M. Mičica and A. Grisard and P. Morfin and R. Lebrun and H. Jaffrès and S. Dhillon and J. -M. George and M. Jamet and M. Bibes},
journal= {arXiv preprint arXiv:2412.20108},
year = {2025}
}