Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this work, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our work not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.
@article{arxiv.2212.12666,
title = {Intrinsic nonlinear Hall effect and gate-switchable Berry curvature sliding in twisted bilayer graphene},
author = {Meizhen Huang and Zefei Wu and Xu Zhang and Xuemeng Feng and Zishu Zhou and Shi Wang and Yong Chen and Chun Cheng and Kai Sun and Zi Yang Meng and Ning Wang},
journal= {arXiv preprint arXiv:2212.12666},
year = {2023}
}