Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors
Mesoscale and Nanoscale Physics
2009-11-11 v2 Other Condensed Matter
Abstract
Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is independent of the domain wall shape and width when the latter is larger than the Fermi wavelength. For typical parameters, the intrinsic domain wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.
Keywords
Cite
@article{arxiv.cond-mat/0601436,
title = {Intrinsic Domain Wall Resistance in Ferromagnetic Semiconductors},
author = {Anh Kiet Nguyen and R. V. Shchelushkin and Arne Brataas},
journal= {arXiv preprint arXiv:cond-mat/0601436},
year = {2009}
}
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