We consider the anomalous, spin, valley, and valley spin Hall effects in a pristine ex-so-tic graphene-based van-der-Waals (vdW) heterostructure consisting of a bilayer graphene (BLG) between semiconducting van-der-Waals material with strong SOC (e.g., WS2) and ferromagnetic and insulating vdW material (e.g. Cr2Ge2Te6). Reducing the effective Hamiltonian derived by Zollner et al [Phys. Rev. Lett. 125(19), 196402 (2020)] to low-energy states, and using the Green function formalism, we derived analytical results for the Hall conductivities as a function of the Fermi level and gate voltage. Depending on these parameters, we found quantized valley conductivity.
@article{arxiv.2404.13451,
title = {Intrinsic anomalous, spin and valley Hall effects in ex-so-tic van-der-Waals structures},
author = {I. Wojciechowska and A. Dyrdal},
journal= {arXiv preprint arXiv:2404.13451},
year = {2024}
}