Intrasubband and Intersubband Electron Relaxation in Semiconductor Quantum Wire Structures
Abstract
We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from inter- and intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily responsible for intersubband (intrasubband) inelastic scattering. We identify the contributions to the inelastic scattering rate coming from the emission of the single-particle and the collective excitations individually. We obtain the lifetime of hot electrons injected in each subband as a function of the total charge density in the wire.
Keywords
Cite
@article{arxiv.cond-mat/0004056,
title = {Intrasubband and Intersubband Electron Relaxation in Semiconductor Quantum Wire Structures},
author = {Marcos R. S. Tavares and S. Das Sarma and G-Q. Hai},
journal= {arXiv preprint arXiv:cond-mat/0004056},
year = {2009}
}
Comments
Submitted to PRB. 20 pages, Latex file, and 7 postscript files with Figures