Interplay between Fermi surface topology and ordering in URu$_{2}$Si$_2$ revealed through abrupt Hall coefficient changes in strong magnetic fields

Y. S. Oh; Kee Hoon Kim; P. A. Sharma; N. Harrison; H. Amitsuka; J. A. Mydosh

doi:10.1103/PhysRevLett.98.016401

Interplay between Fermi surface topology and ordering in URu$_{2}$Si$_2$ revealed through abrupt Hall coefficient changes in strong magnetic fields

Strongly Correlated Electrons 2015-06-25 v2

Authors: Y. S. Oh , Kee Hoon Kim , P. A. Sharma , N. Harrison , H. Amitsuka , J. A. Mydosh

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Abstract

Temperature- and field-dependent measurements of the Hall effect of pure and 4 % Rh-doped URu $_{2}$ Si $_{2}$ reveal low density (0.03 hole/U) high mobility carriers to be unique to the `hidden order' phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When combined with existing de Haas-van Alphen data, the Hall data expose a strong interplay between the stability of the `hidden order,' the degree of polarization of the Fermi liquid and the Fermi surface topology.

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@article{arxiv.cond-mat/0609501,
  title  = {Interplay between Fermi surface topology and ordering in URu$_{2}$Si$_2$ revealed through abrupt Hall coefficient changes in strong magnetic fields},
  author = {Y. S. Oh and Kee Hoon Kim and P. A. Sharma and N. Harrison and H. Amitsuka and J. A. Mydosh},
  journal= {arXiv preprint arXiv:cond-mat/0609501},
  year   = {2015}
}

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4 pages, 4 figures, Accepted to Phys. Rev. Lett

Interplay between Fermi surface topology and ordering in URu$_{2}$Si$_2$ revealed through abrupt Hall coefficient changes in strong magnetic fields

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