Carrier dynamics at energy level anticrossings in biased semiconductor superlattices, was studied in the time domain by solving the time-dependent Schroedinger equation. The resonant nature of interminiband Rabi oscillations has been explicitly demonstrated to arise from interference of intrawell and Bloch oscillations. We also report a simulation of direct Rabi oscillations across three minibands, in the high field regime, due to interaction between three strongly coupled minibands.
Cite
@article{arxiv.cond-mat/0702227,
title = {Interminiband Rabi oscillations in biased semiconductor superlattices},
author = {Pavel Abumov and D. W. L. Sprung},
journal= {arXiv preprint arXiv:cond-mat/0702227},
year = {2009}
}