The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe2-WSe2 heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.
@article{arxiv.2302.02617,
title = {Interface engineering of charge-transfer excitons in 2D lateral heterostructures},
author = {Roberto Rosati and Ioannis Paradisanos and Libai Huang and Ziyang Gan and Antony George and Kenji Watanabe and Takashi Taniguchi and Laurent Lombez and Pierre Renucci and Andrey Turchanin and Bernhard Urbaszek and Ermin Malic},
journal= {arXiv preprint arXiv:2302.02617},
year = {2023}
}