Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures
Strongly Correlated Electrons
2007-05-23 v1
Abstract
We have theoretically investigated nonlinear free-carrier absorption of terahertz radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long standing experimental result on the nonlinear absorption in THz regime.
Keywords
Cite
@article{arxiv.cond-mat/0312057,
title = {Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures},
author = {J. C. Cao},
journal= {arXiv preprint arXiv:cond-mat/0312057},
year = {2007}
}
Comments
4 pages including 3 EPS figs