Influence of excitonic effects on luminescence quantum yield in silicon

A. V. Sachenko; V. P. Kostylyov; V. M. Vlasyuk; I. O. Sokolovskyi; M. Evstigneev

doi:10.1016/j.jlumin.2016.11.028

Influence of excitonic effects on luminescence quantum yield in silicon

Materials Science 2016-12-21 v1

Authors: A. V. Sachenko , V. P. Kostylyov , V. M. Vlasyuk , I. O. Sokolovskyi , M. Evstigneev

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Abstract

Nonradiative exciton lifetime in silicon is determined by comparison of the experimental and theoretical curves of bulk minority charge carriers lifetime on doping and excitation levels. This value is used to analyze the influence of excitonic effects on internal luminescence quantum yield at room temperature, taking into account both nonradiative and radiative exciton lifetimes. A range of Shockley-Hall-Reed lifetimes is found, where excitonic effects lead to an increase of internal luminescence quantum yield.

Keywords

silicon excitonic effects luminescence quantum yield nonradiative exciton lifetime Shockley-Hall-Reed lifetime minority charge carriers radiative lifetime

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@article{arxiv.1608.03848,
  title  = {Influence of excitonic effects on luminescence quantum yield in silicon},
  author = {A. V. Sachenko and V. P. Kostylyov and V. M. Vlasyuk and I. O. Sokolovskyi and M. Evstigneev},
  journal= {arXiv preprint arXiv:1608.03848},
  year   = {2016}
}

Influence of excitonic effects on luminescence quantum yield in silicon

Abstract

Keywords

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