The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples.
@article{arxiv.1605.03465,
title = {Influence of disordered edges on transport properties in graphene},
author = {D. Smirnov and G. Yu. Vasileva and J. C. Rode and C. Belke and Yu. B. Vasilyev and Yu. L. Ivanov and R. J. Haug},
journal= {arXiv preprint arXiv:1605.03465},
year = {2016}
}