English

Increasing the coherence time of single electron spins in diamond by high temperature annealing

Materials Science 2015-05-20 v1 Quantum Physics

Abstract

Negatively charged Nitrogen-Vacancy (NV^-) centers in diamond produced by ion implantation often show properties different from NVs created during the crystal growth. We observe that NVs created from nitrogen ions with four different energies (30-300 keV) show much shorter electron spin coherence time T2T_2 compared to the "natural" NVs and we could find any dependence of T2T_2 on the implantation energy. Moreover, we also find out that about 10% of them show switching from NV^-to NV0^0. We develop a method to increase T2T_2 of single NV^- centers by annealing the sample at t=1200t=1200 {\circ}C whereas at the same time the fraction of the NVs showing discharging is greatly reduced.

Keywords

Cite

@article{arxiv.1012.0216,
  title  = {Increasing the coherence time of single electron spins in diamond by high temperature annealing},
  author = {Boris Naydenov and Friedemann Reinhard and Anke Lämmle and V. Richter and Rafi Kalish and Ulrika F. S. D'Haenens-Johansson and Mark Newton and Fedor Jelezko and Jörg Wrachtrup},
  journal= {arXiv preprint arXiv:1012.0216},
  year   = {2015}
}

Comments

Accepted for publication in Appl. Phys. Lett