Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Lianfeng Zhao; Zhen Tan; Jing Wang; Jun Xu

doi:10.1088/1674-1056/23/7/078102

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Materials Science 2015-06-17 v1

Authors: Lianfeng Zhao , Zhen Tan , Jing Wang , Jun Xu

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Abstract

Surface passivation with acidic (NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, those treated with acidic (NH4)2S solution showed great improvements in frequency dispersion, gate leakage current and interface trap density. These improvements were attributed to the acidic (NH4)2S solution enhancing passivation of the substrates, which was analyzed from the perspective of chemical mechanism and confirmed by X-ray photoelectron spectroscopy and high-resolution cross-sectional transmission electron microscopy.

Keywords

GaSb metal oxide semiconductor surface passivation (NH4)2S solution HfO2 interface trap density X-ray photoelectron spectroscopy

Cite

@article{arxiv.1310.4591,
  title  = {Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution},
  author = {Lianfeng Zhao and Zhen Tan and Jing Wang and Jun Xu},
  journal= {arXiv preprint arXiv:1310.4591},
  year   = {2015}
}

Comments

16 pages, 6 figures

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