Improved approach to Fowler-Nordheim plot analysis
Abstract
This article introduces an improved approach to Fowler-Nordheim (FN) plot analysis, based on a new type of intercept correction factor. This factor is more cleanly defined than the factor previously used. General enabling theory is given that applies to any type of FN plot of data that can be fitted using a FN-type equation. Practical use is limited to emission situations where slope correction factors can be reliably predicted. By making a series of well-defined assumptions and approximations, it is shown how the general formulas reduce to provide an improved theory of orthodox FN-plot data analysis. This applies to situations where the circuit current is fully controlled by the emitter characteristics, and tunneling can be treated as taking place through a Schottky-Nordheim (SN) barrier. For orthodox emission, good working formulas make numerical evaluation of the slope correction factor and the new intercept correction factor quick and straightforward. A numerical illustration, using simulated emission data, shows how to use this improved approach to derive values for parameters in the full FN-type equation for the SN barrier. Good self-consistency is demonstrated. The general enabling formulas also pave the way for research aimed at developing analogous data-analysis procedures for non-orthodox emission situations.
Cite
@article{arxiv.1208.3820,
title = {Improved approach to Fowler-Nordheim plot analysis},
author = {Richard G. Forbes and Andreas Fischer and Marwan S. Mousa},
journal= {arXiv preprint arXiv:1208.3820},
year = {2018}
}
Comments
Paper is extended version of poster presented at the 25th International Vacuum Nanoelectronics Conference, Jeju island, South Korea, July 2012. Third version includes small changes made at proof correction stage