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I4/mcm-Si$_{48}$: An Ideal Topological Nodal-Line Semimetal

Materials Science 2022-02-23 v1

Abstract

Topological semimetals (TSMs) have attracted numerous attention due to their exotic physical properties and great application potentials. Silicon-based TMSs are of particularly importance because of their high abundance, nontoxicity and natural compatibility with current semiconductor industry. In this work, an ideal low-energy topological nodal-line semimetal (TNLSM) silicon (I4/mcm-Si48_{48}) with a clean band crossing at Fermi level is screened from thousands of silicon allotropes by the transferable tight-binding and DFT-HSE calculations. The results of formation energy, phonon dispersion, ab initio molecular dynamics and elastic constants show that I4/mcm-Si48 possesses good stability and is more stable than several synthetized silicon structures. By analyzing the symmetry, it reveals that the topological nodal-line of I4/mcm-Si48 is protected by mirror symmetry and inversion, time-reversal and SU(2) spin-rotation symmetries, and the nearly flat drumhead-like surface spectrum is observed. Furthermore, I4/mcm-Si48 exhibits exotic photoelectric properties and the Dirac fermions with high Fermi velocity (3.4\sim4.36×\times105^5 m/s) can be excited by low energy photons. Our study provides a promising topological nodal-line semimetal for fundamental research and potential practical applications in semiconductor-compatible high-speed photoelectric devices.

Keywords

Cite

@article{arxiv.2202.10604,
  title  = {I4/mcm-Si$_{48}$: An Ideal Topological Nodal-Line Semimetal},
  author = {Laiyuan Su and Shifang Li and Jin Li and Chaoyu He and Xu-Tao Zeng and Xian-Lei Sheng and Tao Ouyang and Chunxiao Zhang and Chao Tangand Jianxin Zhong},
  journal= {arXiv preprint arXiv:2202.10604},
  year   = {2022}
}

Comments

10 pages, 5 figures