An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory materials were used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources were developed for the non-stop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in-situ growth chamber cleaning were implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm were grown with the reactor.
@article{arxiv.1912.11010,
title = {Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth},
author = {Vladislav Voronenkov and Natalia Bochkareva and Andrey Zubrilov and Yuri Lelikov and Ruslan Gorbunov and Philipp Latyshev and Yuri Shreter},
journal= {arXiv preprint arXiv:1912.11010},
year = {2019}
}