Homogeneous switching in ultrathin ferroelectric BaTiO3 films

S. Ducharme; V. Fridkin; R. Gaynutdinov; M. Minnekaev; A. Tolstikhina; A. Zenkevich

Homogeneous switching in ultrathin ferroelectric BaTiO3 films

Mesoscale and Nanoscale Physics 2012-04-24 v1 Materials Science

Authors: S. Ducharme , V. Fridkin , R. Gaynutdinov , M. Minnekaev , A. Tolstikhina , A. Zenkevich

Abstract

Switching kinetics in ultrathin epitaxial BaTiO3 films confirms the existence of the homogeneous switching (without domains) in ultrathin ferroelectric films. We suppose that the homogeneous switching in ultrathin films is a common phenomenon for all ferroelectric materials.

Keywords

switching kinetics ultrathin ferroelectric films BaTiO3 homogeneous switching domain-free switching epitaxial films

Cite

@article{arxiv.1204.4792,
  title  = {Homogeneous switching in ultrathin ferroelectric BaTiO3 films},
  author = {S. Ducharme and V. Fridkin and R. Gaynutdinov and M. Minnekaev and A. Tolstikhina and A. Zenkevich},
  journal= {arXiv preprint arXiv:1204.4792},
  year   = {2012}
}

Comments

3 pages, 3 figures

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