History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films

Xiaoyan Shi; Dragana Popović; C. Panagopoulos; G. Logvenov; A. T. Bollinger; I. Božović

doi:10.1016/j.physb.2012.01.063

History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films

Strongly Correlated Electrons 2015-06-03 v1

Authors: Xiaoyan Shi , Dragana Popović , C. Panagopoulos , G. Logvenov , A. T. Bollinger , I. Božović

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Abstract

The in-plane magnetoresistance (MR) in atomically smooth La_{2-x}Sr_{x}CuO_{4} thin films grown by molecular-beam-epitaxy was measured in magnetic fields B up to 9 T over a wide range of temperatures T. The films, with x=0.03 and x=0.05, are insulating, and the positive MR emerges at T<4 K. The positive MR exhibits glassy features, including history dependence and memory, for all orientations of B. The results show that this behavior, which reflects the onset of glassiness in the dynamics of doped holes, is a robust feature of the insulating state.

Keywords

magnetoresistance history dependence lightly doped La_{2-x}Sr_{x}CuO_{4} thin films glassy features insulating state

Cite

@article{arxiv.1201.0042,
  title  = {History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films},
  author = {Xiaoyan Shi and Dragana Popović and C. Panagopoulos and G. Logvenov and A. T. Bollinger and I. Božović},
  journal= {arXiv preprint arXiv:1201.0042},
  year   = {2015}
}

Comments

4 pages, 4 figures, International School and Workshop on Electronic Crystals (ECRYS-2011); to appear in Physica B

History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films

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