English

Higher-Order Topological Instanton Tunneling Oscillation

Mesoscale and Nanoscale Physics 2020-06-02 v1 Other Condensed Matter

Abstract

We propose a new type of instanton interference effect in two-dimensional higher-order topological insulators. The intercorner tunneling consists of the instanton and the anti-instanton pairs that travel through the boundary of the higher-order topological insulator. The Berry phase difference between the instanton pairs causes the interference of the tunneling. This topological effect leads to the gate-tunable oscillation of the energy splitting between the corner states, where the oscillatory nodes signal the perfect suppression of the tunneling. We suggest this phenomenon as a unique feature of the topological corner states that differentiate from trivial bound states. In the view of experimental realization, we exemplify twisted bilayer graphene, as a promising candidate of a two-dimensional higher-order topological insulator. The oscillation can be readily observed through the transport experiment that we propose. Thus, our work provides a feasible route to identify higher-order topological materials.

Keywords

Cite

@article{arxiv.2006.01111,
  title  = {Higher-Order Topological Instanton Tunneling Oscillation},
  author = {Moon Jip Park and Sunam Jeon and SungBin Lee and Hee Chul Park and Youngkuk Kim},
  journal= {arXiv preprint arXiv:2006.01111},
  year   = {2020}
}

Comments

4+9 pages, 4 figures

R2 v1 2026-06-23T15:58:10.404Z