The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 {\mu}m2 and 60 {\mu}m2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large area CVD grown samples.
@article{arxiv.1704.01900,
title = {High Throughput Characterization of Epitaxially Grown Single-Layer MoS2},
author = {Foad Ghasemi and Riccardo Frisenda and Dumitru Dumcenco and Andras Kis and David Perez de Lara and Andres Castellanos-Gomez},
journal= {arXiv preprint arXiv:1704.01900},
year = {2017}
}