English

High sensitive quasi freestanding epitaxial graphene gassensor on 6H-SiC

Materials Science 2015-06-16 v1 Instrumentation and Detectors

Abstract

We have measured the electrical response to NO2_2, N2_2, NH3_3 and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity better than the experimentally limited 1 ppb. The strong increase in sensitivity of quasi freestanding epitaxial graphene can be explained by a Fermi-energy close to the Dirac Point leading to a strongly surface doping dependent sample resistance. Both sensors show a negligible sensitivity to N2_2, NH3_3 and CO.

Keywords

Cite

@article{arxiv.1305.4737,
  title  = {High sensitive quasi freestanding epitaxial graphene gassensor on 6H-SiC},
  author = {I. Iezhokin and P. Offermans and S. H. Brongersma and A. J. M. Giesbers and C. F. J. Flipse},
  journal= {arXiv preprint arXiv:1305.4737},
  year   = {2015}
}