English

High-resolution soft x-ray photoemission study of a Kondo semiconductor and related compounds

Strongly Correlated Electrons 2018-10-02 v1

Abstract

We have performed the bulk-sensitive high-resolution soft x-ray photoemission study of a Kondo semiconductor CeRhAs and related compounds CeNiSn and CePdSn. The comparison of the spectra of polycrystalline CePdSn on the fractured and scraped surfaces shows that the fracturing of the samples is much better than the scraping in order to obtain intrinsic photoemission spectra. The Ce 4d core-level spectra show clear differences in the electronic states among the materials.

Keywords

Cite

@article{arxiv.cond-mat/0410366,
  title  = {High-resolution soft x-ray photoemission study of a Kondo semiconductor and related compounds},
  author = {A. Sekiyama and Y. Fujita and M. Tsunekawa and S. Kasai and A. Shigemoto and S. Imada and D. T. Adroja and T. Yoshino and F. Iga and T. Takabatake and T. Nanba and S. Suga},
  journal= {arXiv preprint arXiv:cond-mat/0410366},
  year   = {2018}
}

Comments

4 pages including 3 figures, to appear in Journal of Electron Spectroscopy and Related Phenomena