High-order sideband generation in bulk GaAs
Mesoscale and Nanoscale Physics
2015-06-11 v1 Materials Science
Optics
Abstract
When an intense THz field at frequency f_THz is applied to excitons resonantly created in bulk GaAs by a near IR laser at frequency f_NIR, sidebands are observed at frequencies f_sideband = f_NIR + 2nf_THz, where n is an integer. At temperature T=10 K, sidebands of order -4 {greater than or equal to} 2n {greater than or equal to} 16 are observed. Sidebands up to 10th order persist at 170 K.
Cite
@article{arxiv.1210.6339,
title = {High-order sideband generation in bulk GaAs},
author = {Benjamin Zaks and Hunter Banks and Mark S. Sherwin},
journal= {arXiv preprint arXiv:1210.6339},
year = {2015}
}
Comments
6 pages, 3 figures