High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications
Abstract
We present a systematic design methodology, combining simulation and experimental validation, for high-speed 940 nm vertical-cavity surface-emitting lasers (VCSELs). A comprehensive simulation study was conducted to optimize the device structure, focusing on the number of oxide layers and the aperture size, which predicted a maximum modulation bandwidth of over 35 GHz. To validate this approach, an optimized device with a 4-{\mu}m double-oxide aperture was fabricated and characterized. Crucially, during the fabrication process, a Zn-diffused region was incorporated to further enhance device performance. The experimental results demonstrate a modulation bandwidth of 34 GHz and successful 100 Gbit/s PAM-4 data transmission. The excellent agreement between the simulated and measured performance validates the effectiveness of our design meth-odology, providing a reliable framework for developing next-generation optical inter-connects.
Cite
@article{arxiv.2603.16144,
title = {High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications},
author = {Fu-He Hsiao and Yu-Jie Lin and Chia-Jung Tsai and Chia-Chen Li and Yun-Han Chang and Chih-Ting Chang and Jr-Hau He and Chun-Liang Lin and Yu-Heng Hong and Hao-Chung Kuo},
journal= {arXiv preprint arXiv:2603.16144},
year = {2026}
}