Heavily $n$-doped Ge: low-temperature magnetoresistance properties
Materials Science
2020-09-15 v1
Abstract
We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications
Keywords
Cite
@article{arxiv.2009.06046,
title = {Heavily $n$-doped Ge: low-temperature magnetoresistance properties},
author = {A. Ferreira da Silva and M. A. Toloza Sandoval and A. Levine and E. Levinson and H. Boudinov and B. E. Sernelius},
journal= {arXiv preprint arXiv:2009.06046},
year = {2020}
}
Comments
5 pages, 7 figures