Heating of a trapped ion induced by dielectric materials
Quantum Physics
2021-06-16 v1 Materials Science
Abstract
Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ion's motion. Such dielectrics are integral components of ion traps. Quantitative agreement is found between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.
Keywords
Cite
@article{arxiv.2103.13846,
title = {Heating of a trapped ion induced by dielectric materials},
author = {Markus Teller and Dario A. Fioretto and Philip C. Holz and Philipp Schindler and Viktor Messerer and Klemens Schüppert and Yueyang Zou and Rainer Blatt and John Chiaverini and Jeremy Sage and Tracy E. Northup},
journal= {arXiv preprint arXiv:2103.13846},
year = {2021}
}