Heat Coulomb blockade in a double-island metal-semiconductor device
Mesoscale and Nanoscale Physics
2026-02-04 v2
Abstract
We study the thermal transport properties of a mesoscopic device comprising two metallic islands embedded in a two-dimensional electron gas in the integer quantum Hall regime. It is shown that the ballistic edge channels connecting the islands to the external reservoirs and the inter-island channels play a central role in the phenomenon of heat Coulomb blockade. Unlike the single-island case, where the heat flux is reduced by exactly one quantum of thermal conductance, we predict an additional suppression proportional to the factor . We further examine a configuration in which the islands are placed between electrodes at different temperatures and identify the conditions under which the Wiedemann-Franz law is violated.
Cite
@article{arxiv.2511.06783,
title = {Heat Coulomb blockade in a double-island metal-semiconductor device},
author = {A. V. Parafilo},
journal= {arXiv preprint arXiv:2511.06783},
year = {2026}
}