English

Heat Coulomb blockade in a double-island metal-semiconductor device

Mesoscale and Nanoscale Physics 2026-02-04 v2

Abstract

We study the thermal transport properties of a mesoscopic device comprising two metallic islands embedded in a two-dimensional electron gas in the integer quantum Hall regime. It is shown that the 2M2M ballistic edge channels connecting the islands to the external reservoirs and the NN inter-island channels play a central role in the phenomenon of heat Coulomb blockade. Unlike the single-island case, where the heat flux is reduced by exactly one quantum of thermal conductance, we predict an additional suppression proportional to the factor M2/(2N+M)2M^2/(2N+M)^2. We further examine a configuration in which the islands are placed between electrodes at different temperatures and identify the conditions under which the Wiedemann-Franz law is violated.

Keywords

Cite

@article{arxiv.2511.06783,
  title  = {Heat Coulomb blockade in a double-island metal-semiconductor device},
  author = {A. V. Parafilo},
  journal= {arXiv preprint arXiv:2511.06783},
  year   = {2026}
}