HARP: Hadamard-Domain Write-and-Verify for Noise-Robust RRAM Programming
Abstract
Write-and-verify (WV) is essential for programming multi-level RRAM weights, yet under scaled-voltage and low-SNR conditions the verify read increasingly limits mapping accuracy, convergence speed and energy. We propose a Hadamard-domain WV framework that improves verify reliability without adding analog hardware. % without introducing additional analog blocks % while leveraging the existing analog front-end \emph{HD-PV} (Hadamard-Encoded Parallel-Verify) replaces conventional one-hot verify reads with orthogonal Hadamard patterns for an -cell column. Changing the read basis without increasing the column-level read count, inverse Hadamard decoding reduces uncorrelated read-noise variance by a factor of and cancels common-mode disturbances. \emph{HARP} (Hadamard-based ADC-Energy-Reduced Parallel-Verify) further exploits the fact that WV needs only ternary update decisions, not full digital codes, and replaces SAR conversions with lightweight compare-only operations. Across CIFAR-10, CIFAR-100, and keyword spotting under severe read noise, conventional WV loses over 20\,\% accuracy on CIFAR-10, while HD-PV and HARP limit the loss to 0.6\,\% and 1\,\% under the same memory footprint. Compared to conventional multi-read averaging for noise reduction, HD-PV and HARP achieve comparable accuracy with up to and lower latency and and better energy efficiency, respectively. To the best of our knowledge, this is the first application of Hadamard-encoded verification to RRAM WV.
Cite
@article{arxiv.2604.12420,
title = {HARP: Hadamard-Domain Write-and-Verify for Noise-Robust RRAM Programming},
author = {Ilhuan Choi and Jiwon Yoo and Yoona Lee and Yewon Jeong and Jason Jaesung Lee and Woo-Seok Choi},
journal= {arXiv preprint arXiv:2604.12420},
year = {2026}
}
Comments
9 pages, 13 figures