Growth Pattern of Silicon Clusters
chem-ph
2009-10-28 v1 Condensed Matter
Chemical Physics
Abstract
Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounced preference for residing on the surface.
Cite
@article{arxiv.chem-ph/9506003,
title = {Growth Pattern of Silicon Clusters},
author = {Atul Bahel and Jun Pan and Mushti V. Ramakrishna},
journal= {arXiv preprint arXiv:chem-ph/9506003},
year = {2009}
}
Comments
Modern Physics Letters B in press, 9 pages + 2 figures. PostScript version available at ftp://ramanujan.chem.nyu.edu/pub/mplb1.ps