Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions

Edwin W. Lee; Lu Ma; Digbijoy N. Nath; Choong Hee Lee; Yiying Wu; Siddharth Rajan

Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions

Materials Science 2014-02-11 v1

Authors: Edwin W. Lee , Lu Ma , Digbijoy N. Nath , Choong Hee Lee , Yiying Wu , Siddharth Rajan

Abstract

The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2 films were found to be crystalline based on x-ray diffraction measurements. The resulting heterojunction was found to display rectification and current-voltage characteristics consistent with a p-n junction diode. Capacitance voltage measurements were used to determine the built-in voltage for the p-MoS2/n-SiC heterojunction p-n diode. The demonstration of heterogeneous material integration between 2D layered semiconductors and 3D SiC enables a new class of heterostructures.

Keywords

MoS2 SiC heterojunction chemical vapor deposition p-n junction electrical characterization 2D materials

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@article{arxiv.1402.1816,
  title  = {Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions},
  author = {Edwin W. Lee and Lu Ma and Digbijoy N. Nath and Choong Hee Lee and Yiying Wu and Siddharth Rajan},
  journal= {arXiv preprint arXiv:1402.1816},
  year   = {2014}
}

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9 pages, 6 figures

Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions

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