We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between the magnitude of the LMR and the average mobility (<\mu>) of the films over nearly two orders of magnitude change of <\mu>. The granularity controlled LMR effect here is attributed to the mobility fluctuation induced classical LMR according to the Parish-Littlewood theory. These findings have implications to both the fundamental understanding and magneto-resistive device applications of TI and small bandgap semiconductor materials.
@article{arxiv.1501.06497,
title = {Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films},
author = {Z. H. Wang and L. Yang and X. J. Li and X. T. Zhao and H. L. Wang and Z. D. Zhang and Xuan P. A. Gao},
journal= {arXiv preprint arXiv:1501.06497},
year = {2015}
}