Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
Analysis of PDEs
2024-08-21 v2
Abstract
In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity.
Cite
@article{arxiv.1108.5844,
title = {Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate},
author = {Hao Wu and Jie Jiang},
journal= {arXiv preprint arXiv:1108.5844},
year = {2024}
}