Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors [1-4]. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.
@article{arxiv.1410.7342,
title = {Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction},
author = {Xiaoyan Shi and Wenlong Yu and Zhigang Jiang and B. Andrei Bernevig and W. Pan and S. D. Hawkins and J. F. Klem},
journal= {arXiv preprint arXiv:1410.7342},
year = {2015}
}