Strongly correlated and topological phases in moir\'e materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle (≈1.1∘), devices exhibit a pronounced elastoresistance that depends on band filling and temperature, with a gauge factor more than two orders of magnitude larger than that of conventional metals. In selected doping regimes the elastoresistance exhibits a Curie-Weiss-like temperature divergence. We discuss possible microscopic origins, including nematic fluctuations and enhanced electronic entropy from fluctuating isospin moments. Our work establishes uniaxial strain as a versatile probe of correlated physics in a moir\'e material.
@article{arxiv.2505.10506,
title = {Giant elastoresistance in magic-angle twisted bilayer graphene},
author = {Xuetao Ma and Zhaoyu Liu and Jiaqi Cai and Kenji Watanabe and Takashi Taniguchi and Xiaodong Xu and Jiun-Haw Chu and Matthew Yankowitz},
journal= {arXiv preprint arXiv:2505.10506},
year = {2025}
}